Reaction
Bonded Silicon Carbide
Technical Parameter(SiSiC) |
|
| Item |
Unit |
Data |
| temperature
of application |
℃ |
1380 |
| density |
g/cm3 |
>3.02 |
| open
porosity |
% |
<0.1 |
| bending
strength |
MPa |
250(20℃) |
| MPa |
280(1200℃) |
| modulus
of elasticity |
GPa |
330(20℃) |
| GPa |
300(1200℃) |
| thermal
conductivity |
W/m.k |
45(1200℃) |
| coefficient
of thermal expansion |
K-1×10-6 |
4.5 |
| rigidity |
|
13 |
| acid-proof
alkaline |
|
excellent |
|
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